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MR16R082CBN1-CG6

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Samsung MR16R082CBN1-CG6

Samsung MR16R082CBN1-CG6 overview

Samsung Semiconductor MR16R082CBN1-CG6 Dram, Memory Density:1.6106 Gbit, Memory Width:16, Organization:96MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1...

Manufactured bySamsung
Part number or familyMR16R082CBN1-CG6
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor MR16R082CBN1-CG6 Dram, Memory Density:1.6106 Gbit, Memory Width:16, Organization:96MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Clock Frequency-Max (fCLK):600 MHz, Access Mode:BLOCK ORIENTED PROTOCOL

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