Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor MD18R326GAG0-CT9 Dram, Memory Density:9.6637 Gbit, Memory Width:36, Organization:256MX36, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:32 ns, Clock Frequency-Max (fCLK):533 MHz, Refresh Cycles:32768, Access Mode:BLOCK ORIENTED PROTOCOL
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Samsung
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Modules
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