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MD16R1624EG0-CT9

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Samsung MD16R1624EG0-CT9

Samsung MD16R1624EG0-CT9 overview

Samsung Semiconductor MD16R1624EG0-CT9 Dram, Memory Density:1.0737 Gbit, Memory Width:32, Organization:32MX32, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1...

Manufactured bySamsung
Part number or familyMD16R1624EG0-CT9
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor MD16R1624EG0-CT9 Dram, Memory Density:1.0737 Gbit, Memory Width:32, Organization:32MX32, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:32 ns, Refresh Cycles:16384, Access Mode:BLOCK ORIENTED PROTOCOL

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