Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M965G5125BQ0-C10 Dram, Memory Density:33.5544 Mbit, Memory Width:64, Organization:512KX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:1024, Access Mode:DUAL BANK PAGE BURST
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Samsung
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Modules
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