Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung M471B5673GB0-CH9 DDR3 Memory, M471B5673GB0-CH9 CNF 2GB 204p PC3-10600 CL9 16c 128x8 DDR3-1333 2Rx8 1.5V SODIMM RFB, Samsung
DescriptionSamsung Semiconductor M471B5673GB0-CH9 Dram, Memory Density:17.1799 Gbit, Memory Width:64, Organization:256MX64, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
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Modules
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