Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung M471B2874EH1-CH9 DDR3 Memory, M471B2874EH1-CH9 CUZ 1GB 204p PC3-10600 CL9 8c 64X16 DDR3-1333 2Rx16 1.5V SODIMM, Samsung
DescriptionSamsung Semiconductor M471B2874EH1-CH9 Dram, Memory Density:8.5899 Gbit, Memory Width:64, Organization:128MX64, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
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Samsung
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Modules
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