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M470T6554EZ3-CE6

Samsung ยท Modules

Samsung M470T6554EZ3-CE6

Samsung M470T6554EZ3-CE6 overview

Samsung Semiconductor M470T6554EZ3-CE6 Dram, Memory Density:4.295 Gbit, Memory Width:64, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1....

Manufactured bySamsung
Part number or familyM470T6554EZ3-CE6
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M470T6554EZ3-CE6 Dram, Memory Density:4.295 Gbit, Memory Width:64, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST

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