Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung M470T6554BG0-CCC DDR2 Memory, M470T6554BG0-CCC AVV 512MB 200p PC2-3200 CL3 8c 32x16 DDR2-400 SODIMM T004-NOB Korea, Samsung
DescriptionSamsung Semiconductor M470T6554BG0-CCC Dram, Memory Density:4.295 Gbit, Memory Width:64, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
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Modules
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