Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung M470T6464QZ3-CF7 DDR2 Memory, M470T6464QZ3-CF7 CCC 512MB 200p PC2-6400 CL6 4c 64x16 DDR2-800 1Rx16 SODIMM NOB Korea, Samsung
DescriptionSamsung Semiconductor M470T6464QZ3-CF7 Dram, Memory Density:4.295 Gbit, Memory Width:64, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:400 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST
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Modules
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