Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M470T5267AH3-CE6 Dram, Memory Density:34.3597 Gbit, Memory Width:64, Organization:512MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
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Samsung
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Modules
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