Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung M470T3354EZ3-CE6 DDR2 Memory, M470T3354EZ3-CE6 BOL 256MB 200p PC2-5300 CL5 4c 32x16 DDR2-667 SODIMM T004 RFB, Samsung
DescriptionSamsung Semiconductor M470T3354EZ3-CE6 Dram, Memory Density:2.1475 Gbit, Memory Width:64, Organization:32MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST
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Modules
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