Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M470T3354BG3-CCC Dram, Memory Density:2.1475 Gbit, Memory Width:64, Organization:32MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST
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Samsung
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Modules
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