Samsung M470T2953BS0-CCC overview
Samsung Semiconductor M470T2953BS0-CCC Dram, Memory Density:8.5899 Gbit, Memory Width:64, Organization:128MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
What is Samsung M470T2953BS0-CCC?
Samsung Semiconductor M470T2953BS0-CCC Dram, Memory Density:8.5899 Gbit, Memory Width:64, Organization:128MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
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Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M470T2953BS0-CCC Dram, Memory Density:8.5899 Gbit, Memory Width:64, Organization:128MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
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