Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung M470T2864QH3-CF7 DDR2 Memory, M470T2864QH3-CF7 CID 1GB 200p PC2-6400 CL6 8c 64x16 DDR2-800 2Rx16 1.8V SODIMM-RFB, Samsung
DescriptionSamsung Semiconductor M470T2864QH3-CF7 Dram, Memory Density:8.5899 Gbit, Memory Width:64, Organization:128MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:400 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Available from
Sourcing support available
Start a sourcing request