Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung M470L6524BT0-CB0 DDR Memory, M470L6524BT0-CB0 ABB 512MB 200p PC2100 CL2.5 8c 32x16 DDR SODIMM T005, Samsung
DescriptionSamsung Semiconductor M470L6524BT0-CB0 Dram, Memory Density:4.295 Gbit, Memory Width:64, Organization:64MX64, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:750 ps, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
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