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M466S1724BT2-L10

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Samsung M466S1724BT2-L10

Samsung M466S1724BT2-L10 overview

Samsung Semiconductor M466S1724BT2-L10 Dram, Memory Density:1.0737 Gbit, Memory Width:64, Organization:16MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3...

Manufactured bySamsung
Part number or familyM466S1724BT2-L10
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M466S1724BT2-L10 Dram, Memory Density:1.0737 Gbit, Memory Width:64, Organization:16MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST

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