Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M466S0424CT0-L10 Dram, Memory Density:268.4355 Mbit, Memory Width:64, Organization:4MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
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Samsung
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Modules
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