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M393T2950BG0-CE6

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Samsung M393T2950BG0-CE6

Samsung M393T2950BG0-CE6 overview

Samsung Semiconductor M393T2950BG0-CE6 Dram, Memory Density:9.6637 Gbit, Memory Width:72, Organization:128MX72, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Max...

Manufactured bySamsung
Part number or familyM393T2950BG0-CE6
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M393T2950BG0-CE6 Dram, Memory Density:9.6637 Gbit, Memory Width:72, Organization:128MX72, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Max:450 ps, Access Mode:SINGLE BANK PAGE BURST

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