Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG M393B5170EH1-CH9 Integrated Circuit, M393B5170EH1-CH9 SAMSUNG
DescriptionSamsung Semiconductor M393B5170EH1-CH9 Dram, Memory Density:38.6547 Gbit, Memory Width:72, Organization:512MX72, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:225 ps, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Available from
Sourcing support available
Start a sourcing request