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M383L6420EUS-CB0

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Samsung M383L6420EUS-CB0

Samsung M383L6420EUS-CB0 overview

Samsung Semiconductor M383L6420EUS-CB0 Dram, Memory Density:4.8318 Gbit, Memory Width:72, Organization:64MX72, Supply Voltage-Nom (Vsup):2.5 V, Access Time-Max:...

Manufactured bySamsung
Part number or familyM383L6420EUS-CB0
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M383L6420EUS-CB0 Dram, Memory Density:4.8318 Gbit, Memory Width:72, Organization:64MX72, Supply Voltage-Nom (Vsup):2.5 V, Access Time-Max:750 ps, Access Mode:FOUR BANK PAGE BURST

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Manufactured by Samsung View Samsung profile
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