Samsung M378T6464EHS-CE6 overview
Samsung Semiconductor M378T6464EHS-CE6 Dram, Memory Density:4.295 Gbit, Memory Width:64, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST
What is Samsung M378T6464EHS-CE6?
Samsung Semiconductor M378T6464EHS-CE6 Dram, Memory Density:4.295 Gbit, Memory Width:64, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST
Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M378T6464EHS-CE6 Dram, Memory Density:4.295 Gbit, Memory Width:64, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request