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M378T6453FZ0-CE6

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Samsung M378T6453FZ0-CE6

Samsung M378T6453FZ0-CE6 overview

DDR2 Unbuffered SDRAM MODULE Samsung Semiconductor M378T6453FZ0-CE6 Dram, Memory Density:4.295 Gbit, Memory Width:64, Organization:64MX64, Supply Voltage-Nom (V...

Manufactured bySamsung
Part number or familyM378T6453FZ0-CE6
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionDDR2 Unbuffered SDRAM MODULE
DescriptionSamsung Semiconductor M378T6453FZ0-CE6 Dram, Memory Density:4.295 Gbit, Memory Width:64, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192, Access Mode:DUAL BANK PAGE BURST

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