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M312L5128MT0-CB0

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Samsung M312L5128MT0-CB0

Samsung M312L5128MT0-CB0 overview

DDR SDRAM Registered Module (TSOP-II) 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit Samsung Semiconductor M312L5128MT0-CB0 Dram, Mem...

Manufactured bySamsung
Part number or familyM312L5128MT0-CB0
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionDDR SDRAM Registered Module (TSOP-II) 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit
DescriptionSamsung Semiconductor M312L5128MT0-CB0 Dram, Memory Density:38.6547 Gbit, Memory Width:72, Organization:512MX72, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:750 ps, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST

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