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M312L2920BZ0-CB3

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Samsung M312L2920BZ0-CB3

Samsung M312L2920BZ0-CB3 overview

Samsung Semiconductor M312L2920BZ0-CB3 Dram, Memory Density:9.6637 Gbit, Memory Width:72, Organization:128MX72, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:...

Manufactured bySamsung
Part number or familyM312L2920BZ0-CB3
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M312L2920BZ0-CB3 Dram, Memory Density:9.6637 Gbit, Memory Width:72, Organization:128MX72, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:700 ps, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST

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