Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M312L2828ETS-CB0 Dram, Memory Density:9.6637 Gbit, Memory Width:72, Organization:128MX72, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:750 ps, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192
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Samsung
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Modules
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