Samsung KMMR16R8GC1-RG6 overview
Samsung Semiconductor KMMR16R8GC1-RG6 Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1...
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Manufactured bySamsung
DescriptionSamsung Semiconductor KMMR16R8GC1-RG6 Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Clock Frequency-Max (fCLK):600 MHz, Access Mode:BLOCK ORIENTED PROTOCOL
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