Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor KMM366S104BTN-G2 Dram, Memory Density:67.1089 Mbit, Memory Width:64, Organization:1MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:8 ns, Clock Frequency-Max (fCLK):83 MHz, Refresh Cycles:4096
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Samsung
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Modules
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