Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG KM432S2030CT-G10 Integrated Circuit, KM432S2030CT-G10 SAMSUNG
DescriptionSamsung Semiconductor KM432S2030CT-G10 Dram, Memory Density:67.1089 Mbit, Memory Width:32, Organization:2MX32, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:2048, Access Mode:FOUR BANK PAGE BURST
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