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KM416V4104BS-5

Samsung ยท Modules

Samsung KM416V4104BS-5

Samsung KM416V4104BS-5 overview

SAMSUNG KM416V4104BS-5 Integrated Circuit, SAMSUNG TSOP Samsung Semiconductor KM416V4104BS-5 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4M...

Manufactured bySamsung
Part number or familyKM416V4104BS-5
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG KM416V4104BS-5 Integrated Circuit, SAMSUNG TSOP
DescriptionSamsung Semiconductor KM416V4104BS-5 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:50 ns, Refresh Cycles:4096, Access Mode:FAST PAGE WITH EDO

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