Product details
Manufactured bySamsung
Product groupModules
DescriptionKM416S1120DT 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16
DescriptionSamsung Semiconductor KM416S1120DT-GC Dram, Memory Density:16.7772 Mbit, Memory Width:16, Organization:1MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:5 ns, Clock Frequency-Max (fCLK):182 MHz, Refresh Cycles:2048, Access Mode:DUAL BANK PAGE BURST
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Modules
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