Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG KM416S1120AT-G12 Integrated Circuit, KM416S1120AT-G12 SAMSUNG
DescriptionSamsung Semiconductor KM416S1120AT-G12 Dram, Memory Density:16.7772 Mbit, Memory Width:16, Organization:1MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:9 ns, Clock Frequency-Max (fCLK):83 MHz, Refresh Cycles:2048
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