Samsung K4X56163PI-FGC6T overview
Samsung Semiconductor K4X56163PI-FGC6T Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies...
Manufactured bySamsung
Part number or familyK4X56163PI-FGC6T
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Manufactured bySamsung
DescriptionSamsung Semiconductor K4X56163PI-FGC6T Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:5.5 ns, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:8192
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