Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung K4W2G1646E-BC11 Integrated Circuit, Samsung BGA
DescriptionSamsung Semiconductor K4W2G1646E-BC11 Dram, Memory Density:2.1475 Gbit, Memory Width:16, Organization:128MX16, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:195 ps, Clock Frequency-Max (fCLK):933 MHz, Refresh Cycles:8192
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