Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4W2G1646C-HC110 Dram, Memory Density:2.1475 Gbit, Memory Width:16, Organization:128MX16, Supply Voltage-Nom (Vsup):1.5 V, Access Time-Max:195 ps, Access Mode:MULTI BANK PAGE BURST
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Samsung
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Modules
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