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K4W1G1646E-HC15

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Samsung K4W1G1646E-HC15

Samsung K4W1G1646E-HC15 overview

SAMSUNG K4W1G1646E-HC15 Specialized Hot IC, SAMSUNG BGA Samsung Semiconductor K4W1G1646E-HC15 Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64...

Manufactured bySamsung
Part number or familyK4W1G1646E-HC15
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4W1G1646E-HC15 Specialized Hot IC, SAMSUNG BGA
DescriptionSamsung Semiconductor K4W1G1646E-HC15 Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:255 ps, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192

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