Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4W1G1646E-HC120 Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:225 ps, Clock Frequency-Max (fCLK):800 MHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST
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Samsung
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Modules
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