Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4W1G1646E-HC11 Specialized Hot IC, SAMSUNG BGA
DescriptionSamsung Semiconductor K4W1G1646E-HC11 Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:195 ps, Clock Frequency-Max (fCLK):900 MHz, Refresh Cycles:8192
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