Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4U52324QE-BC09 Integrated Circuit, SAMSUNG BGA
DescriptionSamsung Semiconductor K4U52324QE-BC09 Dram, Memory Density:536.8709 Mbit, Memory Width:32, Organization:16MX32, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:200 ps, Clock Frequency-Max (fCLK):1.1 GHz, Refresh Cycles:8192
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