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K4U52324QE-BC08

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Samsung K4U52324QE-BC08

Samsung K4U52324QE-BC08 overview

SAMSUNG K4U52324QE-BC08 Integrated Circuit, SAMSUNG BGA Samsung Semiconductor K4U52324QE-BC08 Dram, Memory Density:536.8709 Mbit, Memory Width:32, Organization:...

Manufactured bySamsung
Part number or familyK4U52324QE-BC08
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4U52324QE-BC08 Integrated Circuit, SAMSUNG BGA
DescriptionSamsung Semiconductor K4U52324QE-BC08 Dram, Memory Density:536.8709 Mbit, Memory Width:32, Organization:16MX32, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:190 ps, Clock Frequency-Max (fCLK):1.2 GHz, Refresh Cycles:8192

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