Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4T51163QE-ZCE6 Integrated Circuit, K4T51163QE-ZCE6 SAMSUNG
DescriptionSamsung Semiconductor K4T51163QE-ZCE6 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192
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