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K4T2G044QA-HYE60

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Samsung K4T2G044QA-HYE60

Samsung K4T2G044QA-HYE60 overview

Samsung Semiconductor K4T2G044QA-HYE60 Dram, Memory Density:2.1475 Gbit, Memory Width:4, Organization:512MX4, Supply Voltage-Nom (Vsup):1.55 V, Access Time-Max:...

Manufactured bySamsung
Part number or familyK4T2G044QA-HYE60
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4T2G044QA-HYE60 Dram, Memory Density:2.1475 Gbit, Memory Width:4, Organization:512MX4, Supply Voltage-Nom (Vsup):1.55 V, Access Time-Max:450 ps, Access Mode:MULTI BANK PAGE BURST

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