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K4T28163QO-HCF800

Samsung ยท Modules

Samsung K4T28163QO-HCF800

Samsung K4T28163QO-HCF800 overview

Samsung Semiconductor K4T28163QO-HCF800 Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Ma...

Manufactured bySamsung
Part number or familyK4T28163QO-HCF800
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4T28163QO-HCF800 Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Max:350 ps, Access Mode:FOUR BANK PAGE BURST

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