Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4T28163QO-HCF8 Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:350 ps, Clock Frequency-Max (fCLK):533 MHz, Refresh Cycles:4096
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Samsung
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Modules
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