Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4T1G084QQ-HYE6 Integrated Circuit, SAMSUNG FBGA-60
DescriptionSamsung Semiconductor K4T1G084QQ-HYE6 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.55 V, Power Supplies:1.55 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Available from
Sourcing support available
Start a sourcing request