Samsung K4T1G084QQ-HLF7T overview
Samsung Semiconductor K4T1G084QQ-HLF7T Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1....
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Part number or familyK4T1G084QQ-HLF7T
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Manufactured bySamsung
DescriptionSamsung Semiconductor K4T1G084QQ-HLF7T Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:400 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:8192
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