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K4S643232E-TN50

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Samsung K4S643232E-TN50

Samsung K4S643232E-TN50 overview

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) Samsung Semiconductor K4S643232E-TN50 Dram, Memory Density:67.1089 Mbit, Memory Width:32, Orga...

Manufactured bySamsung
Part number or familyK4S643232E-TN50
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
Description2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
DescriptionSamsung Semiconductor K4S643232E-TN50 Dram, Memory Density:67.1089 Mbit, Memory Width:32, Organization:2MX32, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:4.5 ns, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST

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