Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4S641632H-TL75 Integrated Circuit, K4S641632H-TL75 SAMSUNG
DescriptionSamsung Semiconductor K4S641632H-TL75 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:5.4 ns, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
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