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K4S641632E-TC55

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Samsung K4S641632E-TC55

Samsung K4S641632E-TC55 overview

64Mbit SDRAM Samsung Semiconductor K4S641632E-TC55 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Powe...

Manufactured bySamsung
Part number or familyK4S641632E-TC55
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
Description64Mbit SDRAM
DescriptionSamsung Semiconductor K4S641632E-TC55 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:5 ns, Clock Frequency-Max (fCLK):182 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST

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