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K4S56163LC-RG75

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Samsung K4S56163LC-RG75

Samsung K4S56163LC-RG75 overview

SAMSUNG K4S56163LC-RG75 Specialized Hot IC, SAMSUNG CSP54 Samsung Semiconductor K4S56163LC-RG75 Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organizatio...

Manufactured bySamsung
Part number or familyK4S56163LC-RG75
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4S56163LC-RG75 Specialized Hot IC, SAMSUNG CSP54
DescriptionSamsung Semiconductor K4S56163LC-RG75 Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:5.4 ns, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST

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