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K4S560832C-TC1L

Samsung ยท Modules

Samsung K4S560832C-TC1L

Samsung K4S560832C-TC1L overview

SAMSUNG K4S560832C-TC1L Specialized Hot IC, K4S560832C-TC1L SAMSUNG Samsung Semiconductor K4S560832C-TC1L Dram, Memory Density:268.4355 Mbit, Memory Width:8, Or...

Manufactured bySamsung
Part number or familyK4S560832C-TC1L
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4S560832C-TC1L Specialized Hot IC, K4S560832C-TC1L SAMSUNG
DescriptionSamsung Semiconductor K4S560832C-TC1L Dram, Memory Density:268.4355 Mbit, Memory Width:8, Organization:32MX8, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST

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